• Weebit Nano successfully taped-out test chips featuring its embedded Resistive Random-Access Memory (ReRAM) module at onsemi's 300mm production fab
• The chips are being developed in onsemi's Treo platform, a 65nm Bipolar-CMOS-DMOS (BCD) process
• This tape-out marks a major milestone towards enabling Weebit ReRAM IP on onsemi's Treo platform

Weebit Nano Ltd, a leading developer and licensor of advanced memory technologies, has successfully taped-out (released to manufacturing) test chips featuring its embedded Resistive Random-Access Memory (ReRAM) module at onsemi's 300mm production fab in East Fishkill, NY. The chips are being developed in onsemi's Treo platform, which is a 65nm Bipolar-CMOS-DMOS (BCD) process. onsemi is a U.S. based company that delivers intelligent power and sensing solutions for the automotive, industrial and AI data center markets. This tape-out represents a key milestone towards enabling Weebit ReRAM IP on onsemi's Treo platform. For Treo-based designs, Weebit ReRAM provides an ultra-low-power, high density non-volatile memory (NVM) that unlocks new levels of intelligence and functionality. onsemi's next-generation products are expected to use this breakthrough memory technology. The test chips will now be used for final testing and qualification ahead of anticipated volume production.

Weebit Nano's collaboration with onsemi is progressing rapidly, and this successful tape-out marks a major milestone in completing the technology transfer of Weebit ReRAM to onsemi's advanced BCD process. Weebit has already validated its technology on multiple wafer lots using onsemi's tools and flow, optimising the process and demonstrating solid performance and reliability. Weebit is now progressing towards qualification.