• Commenced engagement with potential semiconductor partners to explore scaling down of oxide-based RRAM technology to 22nm process node
• Planned evaluation program to model performance, reliability, and manufacturability at smaller nodes
• 22nm node offers ideal balance of manufacturability and performance for dorsaVi's adaptive, oxide-based RRAM arrays

dorsaVi Limited (ASX: DVL), a leader in FDA-approved wearable sensor technologies and motion intelligence, has announced that it has commenced engagement with potential semiconductor development partners to explore the scaling down of its oxide-based Resistive Random-Access Memory (RRAM) technology toward the 22 nm process node. This initiative follows the successful validation of the Company's 40 nm RRAM architecture through its Artemis Labs program, where early results demonstrated reliable, high-speed switching and strong endurance across multiple wafers. Advancing towards smaller nodes represents a natural evolution of this technology, unlocking opportunities for greater density, faster switching, and reduced power consumption, key parameters for integration into next-generation edge and wearable computing systems. The 22 nm node is one of the industry's most widely supported, production-ready platforms, offering an ideal balance of manufacturability and performance. For dorsaVi, it provides a strong foundation for adaptive, oxide-based RRAM arrays that must deliver local intelligence in biosensing, prosthetics, and robotics where cloud dependence and latency aren't acceptable. Pending the conclusion of partner selection and feasibility scoping, dorsaVi intends to establish a joint evaluation plan covering device performance, reliability, and integration at 22 nm. Those results will guide the next test-chip design and potential foundry engagement.