• Continuous graphene layer deposited using industrial ALD system
• Graphene formed at temperatures well below semiconductor industry limits
• Enables potential replacement of copper interconnects in advanced chips

Adisyn Ltd has announced the successful demonstration of a continuous graphene layer deposited on a 1cm2 coupon using an industrial Atomic Layer Deposition (ALD) system. The deposition process operated at temperatures well below the semiconductor industry's thermal ceiling of approximately 450°C, a key constraint that has historically prevented the adoption of graphene in semiconductor manufacturing. Characterization tests, including Transmission Electron Microscopy and Raman Spectroscopy, have confirmed the formation of continuous graphene films across the coupon. This result represents a significant milestone, as the semiconductor industry has long recognized the potential of graphene to address the performance limitations of copper interconnects in advanced chips. Copper interconnects, the wiring that connects billions of transistors, have emerged as a critical bottleneck as device geometries continue to shrink, leading to increased resistance, heat generation, and power loss. By demonstrating graphene formation within an industrial ALD system, under semiconductor-compatible conditions, Adisyn has provided a pathway towards the integration of graphene into semiconductor manufacturing. The company will now focus on optimizing the film quality, repeatability, and scaling the process to wafer-level formats, with the goal of engaging with industry partners to validate and commercialize the technology. If successfully deployed, this solution has the potential to enable the semiconductor industry to continue the scaling of advanced chips, supporting the growing demands of AI, high-performance computing, and other applications.

This milestone represents a major step towards enabling graphene to move from a promising material to one that can be integrated into semiconductor manufacturing. Once repeatable high-quality film properties are achieved at scale, this technology has the potential to enable graphene to replace copper in next-generation semiconductor interconnects - unlocking the next generation of advanced chip manufacturing.