• Strategic investment of US$5 million in Agni Semiconductor LLC
• Investment represents 50% of Agni's US$10 million Seed Round
• Sunrise expected to hold approximately 18% of Agni on a fully diluted basis

Sunrise Energy Metals Limited (ASX: SRL) has announced a strategic equity investment of US$5 million in Agni Semiconductor LLC, a US-based developer of next-generation non-volatile memory based on aluminium scandium nitride (AlScN) ferroelectric diode technology. This investment represents 50% of Agni's proposed US$10 million Seed Round, with Sunrise expected to hold approximately 18% of Agni on a fully diluted basis. The investment aligns with Sunrise's long-term strategy of supporting downstream demand opportunities for scandium produced from its Syerston Scandium Project. Sunrise's Chairman Robert Friedland and Managing Director Sam Riggall also intend to invest in the seed round funding. The investment is subject to customary conditions precedent, including satisfactory due diligence, regulatory approvals, and definitive transaction documentation.

The investment in Agni Semiconductor LLC is expected to broaden Sunrise's exposure to emerging scandium-enabled semiconductor technologies and advance the company's strategy of participating in the downstream value chain for scandium.