• Three material stacks qualified for commercial production
• Compatible with standard CMOS processes
• Tape-out targeted for Q3 2026
• CIM architecture integrated directly onto 256Kb array
• 22nm design phase to commence in H2 2027

Dorsavi Ltd has achieved a significant milestone in its 22nm RRAM commercialization program by qualifying three distinct RRAM material stacks. These stacks have passed Back-End-of-Line (BEOL) compatibility testing, ensuring they can be manufactured on standard commercial foundry lines. This breakthrough allows Dorsavi to integrate its RRAM technology directly onto standard CMOS wafers, eliminating the need for a dedicated facility and supporting cost-effective, high-volume production. The company is on track to tape-out a test chip in Q3 2026 and will begin the 22nm design phase in the second half of 2027. Dorsavi's RRAM platform is designed to enable compute-in-memory (CIM) architecture, which reduces energy consumption and decision latency, making it ideal for applications in exoskeletons, industrial robotics, and advanced AI compute arrays.

Tape-out targeted for Q3 2026, 22nm design phase in H2 2027

Dorsavi expects to achieve commercial production of its 22nm RRAM technology in the second half of 2027, following successful tape-out in Q3 2026. This will enable the company to scale its technology to high-value markets.